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Part No.型号
Inductance.(μH)电感量
DCR;max. 直流电阻(mΩ)
Isat;max.饱和电流(A)
Isat;typ. 饱和电流(A)
TOP 工作温度(℃)
Length长(mm)
Width宽(mm)
Heiht高(mm)
Footprint 封装
Shield屏蔽
AEC等级
EMDT-160808S-R18M
0.18
21.00
17.00
5.50
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808S-R22M
0.22
40.00
33.00
5.00
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808S-R24M
0.24
41.00
34.00
4.80
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808H-R24M
0.24
26.00
22.00
4.40
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808U-R24M
0.24
24.00
20.00
4.80
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808S-R33M
0.33
35.00
30.00
4.40
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808S-R47M
0.47
100.0
80.00
3.70
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808H-R47M
0.47
43.00
36.00
3.50
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808S-R56M
0.56
110.0
85.00
3.50
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808H-R56M
0.56
63.00
51.00
2.70
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808S-R68M
0.68
130.0
110.0
3.00
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808U-1R0M
1.00
200.0
180.0
2.60
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808S-1R0M
1.00
115.0
105.0
2.10
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808H-1R0M
1.00
115.0
105.0
2.20
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808S-1R5M
1.50
285.0
240.0
2.00
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808S-2R2M
2.20
260.0
220.0
1.30
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808H-2R2M
2.20
260.0
220.0
1.60
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808S-3R3M
3.30
600.0
500.0
1.20
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808S-4R7M
4.70
700.0
585.0
1.00
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
EMDT-160808S-100M
10.0
1600
1450
0.70
-40~125
1.6±0.2
0.8±0.2
0.80max.
SMD
Y
N
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