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Part No.型号
Inductance.(μH)电感量
DCR;max. 直流电阻(mΩ)
Isat;max.饱和电流(A)
Isat;typ. 饱和电流(A)
TOP 工作温度(℃)
Length长(mm)
Width宽(mm)
Heiht高(mm)
Footprint 封装
Shield屏蔽
AEC等级
EMDT-201608S-R22M
0.22
19.0
14.0
5.60
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608S-R24M
0.24
20.0
14.0
5.50
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608S-R33M
0.33
24.0
18.0
5.30
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608S-R47M
0.47
27.0
24.0
5.00
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608S-R68M
0.68
44.0
39.0
4.20
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608S-1R0M
1.00
60.0
53.0
3.10
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608H-1R0M
1.00
52.0
45.0
3.50
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608S-1R5M
1.50
85.0
73.0
2.80
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608S-2R2M
2.20
180
150
2.20
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608H-2R2M
2.20
140
123
2.30
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608S-3R3M
3.30
220
200
1.80
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608S-4R7M
4.70
290
260
1.50
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608H-4R7M
4.70
325
270
1.30
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608S-6R8M
6.80
405
360
1.30
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608S-100M
10.0
900
800
0.80
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
EMDT-201608H-100M
10.0
800
690
0.90
-40~125
2.0±0.2
1.6±0.2
0.70max.
SMD
Y
N
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