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Sample Request
Part No.型号
Inductance.(μH)电感量
DCR;max. 直流电阻(mΩ)
Isat;max.饱和电流(A)
Isat;typ. 饱和电流(A)
TOP 工作温度(℃)
Length长(mm)
Width宽(mm)
Heiht高(mm)
Footprint 封装
Shield屏蔽
AEC等级
EMDT-201612S-R10M
0.10
6.00
4.00
11.5
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-R11M
0.11
5.60
4.80
11.0
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612H-R11M
0.11
7.50
6.30
14.0
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-R15M
0.15
10.0
7.50
10.5
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-R22M
0.22
10.5
8.50
9.2
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-R24M
0.24
11.0
9.00
8.7
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612H-R24M
0.24
12.5
10.0
10.0
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-R33M
0.33
15.0
10.0
73.0
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-R47M
0.47
17.0
13.0
6.00
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-R68M
0.68
23.0
19.0
5.30
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612H-R68M
0.68
25.0
22.0
5.50
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-1R0M
1.00
36.0
30.0
4.50
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-1R5M
1.50
50.0
40.0
3.50
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-2R2M
2.20
90.0
77.0
2.70
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-3R3M
3.30
165
135
2.30
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612H-3R3M
3.30
130
115
2.30
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-4R7M
4.70
185
160
2.00
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-6R8M
6.80
300
255
1.70
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
EMDT-201612S-100M
10.0
460
410
1.30
-40~125
2.0±0.2
1.6±0.2
1.2max.
SMD
Y
N
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