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Sample Request
Part No.型号
Inductance.(μH)电感量
DCR;max. 直流电阻(mΩ)
Isat;max.饱和电流(A)
Isat;typ. 饱和电流(A)
TOP 工作温度(℃)
Length长(mm)
Width宽(mm)
Heiht高(mm)
Footprint 封装
Shield屏蔽
AEC等级
EMDT-252010S-R10M
0.10
8.5
6.50
12.5
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-R15M
0.15
9.0
7.00
9.50
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-R22M
0.22
17.0
12.0
7.90
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-R24M
0.24
17.5
12.0
7.80
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010H-R24M
0.24
10.0
8.5
8.00
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-R33M
0.33
19.0
13.0
7.20
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-R47M
0.47
22.0
15.0
6.50
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010H-R47M
0.47
15.0
13.0
6.00
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-R68M
0.68
27.0
23.0
5.50
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-R82M
0.82
29.0
25.0
4.80
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-1R0M
1.00
30.0
25.0
4.80
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010H-1R0M
1.00
28.0
25.0
4.50
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-1R5M
1.50
55.0
45.0
3.90
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-1R8M
1.80
60.0
50.0
3.50
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-2R2M
2.20
70.0
62.0
3.00
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010H-2R2M
2.20
70.0
62.0
3.30
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010U-2R2M
2.20
70.0
62.0
3.10
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-3R3M
3.30
100
86.0
2.50
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-4R7M
4.70
180
160
2.00
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010H-4R7M
4.70
130
120
2.00
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-6R8M
6.80
320
270
1.90
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-100M
10.0
560
500
1.40
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
EMDT-252010S-220M
22.0
1300
1100
0.90
-40~125
2.5±0.2
2.0±0.2
1.0max.
SMD
Y
N
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